| PART |
Description |
Maker |
| CR08AS-12 |
Low Power Use Non-Insulated Type
|
Guangdong Kexin Industr...
|
| CR3AMZ |
LOW POWER/ STROBE USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CR05AS |
LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AS |
MITSUBISHI SEMICONDUCTOR (TRIAC) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR5PM |
LOW POWER USE INSULATED TYPE/ PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
| CR3PM |
LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AS |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Powerex Power Semicondu...
Mitsubishi Electric Sem...
|
| BCR5PM |
LOW POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CR3JM |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| BCR20A BCR20E BCR20C |
MEDIUM POWER USE A/ B/ C : NON-INSULATED TYPE/ E : INSULATED TYPE/ GLASS PASSIVATION TYPE
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
